Some advantages of intermediate band solar cells based on type II quantum dots

By: Luque, A (Luque, Antonio)[ 1,2 ] ; Linares, PG (Linares, Pablo G.)[ 2 ] ; Mellor, A (Mellor, Alex)[ 2 ] ; Andreev, V (Andreev, Viacheslav)[ 1 ] ; Marti, A (Marti, Antonio)[ 2 ]
[ 1 ] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[ 2 ] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain

APPLIED PHYSICS LETTERS
Volume: 103 Issue: 12
Article Number: 123901
DOI: 10.1063/1.4821580
Published: SEP 16 2013

Abstract
Unlike Type I, Type II quantum dots do not have hole bound states. This precludes that they invade the host semiconductor bandgap and prevents the reduction of voltage in intermediate band solar cells. It is proven here that the optical transition between the hole extended states and the intermediate bound states within the host bandgap is much stronger than in Type I quantum dots, increasing the current and making this structure attractive for manufacturing these cells. (C) 2013 AIP Publishing LLC.

Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA

Categories / Classification
Research Areas:Physics
Web of Science Categories:Physics, Applied

Document Information
Document Type:Article
Language:English
Accession Number: WOS:000324826000089
ISSN: 0003-6951