Nikolay A. Kalyuzhnyy, PhD
Head of MOCVD Quantum Dots direction in Nanostructure Solar Cells Laboratory
Ioffe Physical-Technical Institute, www.ioffe.ru
EDUCATION AND EMPLOYMENT:
1995-2001: Graduate student of St-Petersburg National Electro Technical University (LETI), Russia
2001: Obtained Master's degree,
2001-2004: Engineer in IOFFE PTI,
2004-2009: Junior researcher in IOFFE PTI,
2012 Obtained PhD degree
2009-present: Researcher in IOFFE PTI.
Development at GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD (with homemade atmospheric pressure MOCVD installation) and zinc diffusion techniques.
Starting the MOCVD growth equipment (homemade installation (based on Neon,Russia) and AIX200/4 installation (Germany).
Development of tandem solar cells for concentration application. As a result of investigations the dual-junction solar cells GaInP/GaAs SCs obtained have demonstrated the conversion efficiency more than 30% for concentration sunlight.
Development of 3-junction GaInP/GaAs/Ge solar cells for terrestrial and space applications.
N.A. Kalyuzhnyy has being working in the field of A3B5 structure epitaxial growth by MOCVD technique. He is one of technologists who are working with the AIX200/4 MOCVD installation (with Dr. V.M.Lantratov and S.A. Mintairov) in PV lab of IOFFE PTI. He participated in start up of the equipments required for the AIX200/4.
He has experience of the epitaxial technology development of arsenide and phosphide semiconductor materials on both GaAs and Ge substrates. In his investigation he uses a number of the methods, including optical in-situ measurements, analysis of current-voltage and spectral characteristics of SCs.
N.A. Kalyuzhnyy is involved in the scientific projects supported by RFBR and Ministry of Education and Science of the Russian Federation.
He is co-author of more than 50 papers and conference proceedings. Main contribution in the publication is the following: epitaxial growth of structures, the analysis of in-situ optical measurements, the analysis of the dark current-voltage characteristics.
A S Gudovskikh , K S Zelentsov , N A Kalyuzhnyy , V V Evstropov , V M Lantratov and S A Mintairov, “Interface properties of GaInP/Ge hetero-structure sub-cells of multi-junction solar cells”, J. Phys. D: Appl. Phys. 45 (2012) 495305 (6pp)
Mintairov,MA; Evstropov,VV; Kalyuzhnyi,NA; Mintairov,SA; Timoshina,NK; Shvartz,MZ; Lantratov,VM., «Photoelectric determination of the series resistance of multijunction solar cells», 2012, Semiconductors, v.46 (8) pp 1051-1058
N.A. Kalyuzhnyy, A.S. Gudovskikh, V.V. Evstropov, V.M. Lantratov, S.A. Mintairov, N.Kh. Timoshina, M.Z. Shvarts, V.M. Andreev, “Germanium Subcells for Multijunction GaInP/GaInAs/Ge Solar Cells”, Semiconductors, 2010, Vol. 44, No. 11, pp. 1520–1528. 2010
Kalyuzhnyy N.A., Gudovskikh A.S., Evstropov V.V., Lantratov V.M., Mintairov S.A., Timoshina N.Kh., Shvarts M.Z. , Andreev V.M. «Current flow and efficiency of Ge p-n junctions in triple-junction GaInP/Ga(In)As/Ge solar cells for space applications» // Proceedings of the 25th EPSEC and 5th World Conference on Photovoltaic Energy Conversion (Valencia, Spain, 6-10 September, 2010) pp.865-871
Kalyuzhnyy N.A., Mintairov S.A., Mintairov M.A. & Lantratov V.M., «Investigation of photovoltaic devices crystallization in MOCVD with in-situ monitoring» // Proc. of the 24th EPSEC (Hamburg, Germany, 21-25 September, 2009) pp. 538-544.
Kalyuzhnyy N.A., Lantratov V.M., Mintairov S.A., Mintairov M.A., Shvarts M.Z., Timoshina N.Kh. and Andreev V.M., “In-situ monitoring during mocvd growth of the triple-junction GaInP/Ga(In)As/Ge solar cells” // Proc. of the 23th EPSEC (Valencia, Spain, 1-5 September, 2008) pp.803-810
V.M.Lantratov , S.A.Mintairov, S.A.Blokhin , N.A.Kalyuzhnyy, N.N.Ledentsov, M.V.Maximov, A.M.Nadtochiy, A.S.Pauysov, A.V.Sakharov, M.Z.Shvarts «AlGaAs/GaAs photovoltaic cells with InGaAs quantum dots», Advances in Science and Technology Vol. 74 (2010) pp 231-236
V. M. Lantratov, V. M. Emelyanov, N. A Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts. «Improvement of radiation resistance of Multijunction GaInP/Ga(In)As/Ge solar cells with application of Bragg reflectors», Advances in Science and Technology Vol. 74 (2010)
Andreev V.M., Kalyuzhnyy N.A., Lantratov V.M., Mintairov S.A., Shvarts M.Z., Timoshina N.Kh., “Concentrator GaInP/GaAs tandem solar cells with in-situ monitoring of the MOCVD growth” // Proc. of the 22th EPSEC (Milan, Italy, 3-7 September, 2007) pp. 542-547
V. M. Lantratov, N. A. Kalyuzhnyy, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts and V. M. Andreev, “High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD”, Semiconductors vol.41, (2007) #6, pp. 727-731.)
V.P.Khvostikov, O.A. Khvostikova, P.Y.Gazaryan, S.V.Sorokina, N.S.Potapovich, A.V.Malevskaya, N.A.Kaluzhniy, M.Z.Shvarts, V.M.Andreev, «Photovoltaic cells based on GaSb and Ge for solar and thermophotovoltaic applications», Journal of Solar Energy Engineering, Trans.-ASME, August 2007, V.129 (3), pp.291-297
Shvarts M.Z., Gazaryan P.Y., Kaluzhniy N.A., Khvostikov V.P., Lantratov V.M., Mintairov S.A., Sorokina S.V., Timoshina N.K. «InGaP/GaAs-GaSb and InGaP/GaAs/Ge-InGaAsSb Hybrid Monolithic/Stacked Tandem Concentrator Solar Cells» // Proc. of the 21st EPSEC (Dresden, Germany, 4-8 September, 2006) pp.133-136.