Nikolay Kalyuzhnyy

CURRICULUM VITAE

Kaluznyy.bmp

Nikolay A. Kalyuzhnyy, PhD

Head of MOCVD Quantum Dots direction in Nanostructure Solar Cells Laboratory

Ioffe Physical-Technical Institute, www.ioffe.ru

 

EDUCATION AND EMPLOYMENT:

1995-2001: Graduate student of St-Petersburg National Electro Technical University (LETI), Russia

2001: Obtained Master's degree,

2001-2004: Engineer in IOFFE PTI,

2004-2009: Junior researcher in IOFFE PTI,

2012 Obtained PhD degree

2009-present: Researcher in IOFFE PTI.

 

ACHIEVEMENTS:

  • Development at GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD (with homemade atmospheric pressure MOCVD installation) and zinc diffusion techniques.

  • Starting the MOCVD growth equipment (homemade installation (based on Neon,Russia) and AIX200/4 installation (Germany).

  • Development of tandem solar cells for concentration application. As a result of investigations the dual-junction solar cells GaInP/GaAs SCs obtained have demonstrated the conversion efficiency more than 30% for concentration sunlight.

  • Development of 3-junction GaInP/GaAs/Ge solar cells for terrestrial and space applications.

 

PRACTICAL EXPERIENCE:

N.A. Kalyuzhnyy has being working in the field of A3B5 structure epitaxial growth by MOCVD technique. He is one of technologists who are working with the AIX200/4 MOCVD installation (with Dr. V.M.Lantratov and S.A. Mintairov) in PV lab of IOFFE PTI. He participated in start up of the equipments required for the AIX200/4.

He has experience of the epitaxial technology development of arsenide and phosphide semiconductor materials on both GaAs and Ge substrates. In his investigation he uses a number of the methods, including optical in-situ measurements, analysis of current-voltage and spectral characteristics of SCs.

N.A. Kalyuzhnyy is involved in the scientific projects supported by RFBR and Ministry of Education and Science of the Russian Federation.

He is co-author of more than 50 papers and conference proceedings. Main contribution in the publication is the following: epitaxial growth of structures, the analysis of in-situ optical measurements, the analysis of the dark current-voltage characteristics.

 

 

MAIN PUBLICATIONS:

  1. A S Gudovskikh , K S Zelentsov , N A Kalyuzhnyy , V V Evstropov , V M Lantratov and S A Mintairov, “Interface properties of GaInP/Ge hetero-structure sub-cells of multi-junction solar cells”, J. Phys. D: Appl. Phys. 45 (2012) 495305 (6pp)

  2. Mintairov,MA; Evstropov,VV; Kalyuzhnyi,NA; Mintairov,SA; Timoshina,NK; Shvartz,MZ; Lantratov,VM., «Photoelectric determination of the series resistance of multijunction solar cells», 2012, Semiconductors, v.46 (8) pp 1051-1058

  3. N.A. Kalyuzhnyy, A.S. Gudovskikh, V.V. Evstropov, V.M. Lantratov, S.A. Mintairov, N.Kh. Timoshina, M.Z. Shvarts, V.M. Andreev, “Germanium Subcells for Multijunction GaInP/GaInAs/Ge Solar Cells”, Semiconductors, 2010, Vol. 44, No. 11, pp. 1520–1528. 2010

  4. Kalyuzhnyy N.A., Gudovskikh A.S., Evstropov V.V., Lantratov V.M., Mintairov S.A., Timoshina N.Kh., Shvarts M.Z. , Andreev V.M. «Current flow and efficiency of Ge p-n junctions in triple-junction GaInP/Ga(In)As/Ge solar cells for space applications» // Proceedings of the 25th EPSEC and 5th World Conference on Photovoltaic Energy Conversion (Valencia, Spain, 6-10 September, 2010) pp.865-871

  5. Kalyuzhnyy N.A., Mintairov S.A., Mintairov M.A. & Lantratov V.M., «Investigation of photovoltaic devices crystallization in MOCVD with in-situ monitoring» // Proc. of the 24th EPSEC (Hamburg, Germany, 21-25 September, 2009) pp. 538-544.

  6. Kalyuzhnyy N.A., Lantratov V.M., Mintairov S.A., Mintairov M.A., Shvarts M.Z., Timoshina N.Kh. and Andreev V.M., “In-situ monitoring during mocvd growth of the triple-junction GaInP/Ga(In)As/Ge solar cells” // Proc. of the 23th EPSEC (Valencia, Spain, 1-5 September, 2008) pp.803-810

  7. V.M.Lantratov , S.A.Mintairov, S.A.Blokhin , N.A.Kalyuzhnyy, N.N.Ledentsov, M.V.Maximov, A.M.Nadtochiy, A.S.Pauysov, A.V.Sakharov, M.Z.Shvarts «AlGaAs/GaAs photovoltaic cells with InGaAs quantum dots», Advances in Science and Technology Vol. 74 (2010) pp 231-236

  8. V. M. Lantratov, V. M. Emelyanov, N. A Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts. «Improvement of radiation resistance of Multijunction GaInP/Ga(In)As/Ge solar cells with application of Bragg reflectors», Advances in Science and Technology Vol. 74 (2010)

  9. Andreev V.M., Kalyuzhnyy N.A., Lantratov V.M., Mintairov S.A., Shvarts M.Z., Timoshina N.Kh., “Concentrator GaInP/GaAs tandem solar cells with in-situ monitoring of the MOCVD growth” // Proc. of the 22th EPSEC (Milan, Italy, 3-7 September, 2007) pp. 542-547

  10. V. M. Lantratov, N. A. Kalyuzhnyy, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts and V. M. Andreev, “High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD”, Semiconductors vol.41, (2007) #6, pp. 727-731.)

  11. V.P.Khvostikov, O.A. Khvostikova, P.Y.Gazaryan, S.V.Sorokina, N.S.Potapovich, A.V.Malevskaya, N.A.Kaluzhniy, M.Z.Shvarts, V.M.Andreev, «Photovoltaic cells based on GaSb and Ge for solar and thermophotovoltaic applications», Journal of Solar Energy Engineering, Trans.-ASME, August 2007, V.129 (3), pp.291-297

  12. Shvarts M.Z., Gazaryan P.Y., Kaluzhniy N.A., Khvostikov V.P., Lantratov V.M., Mintairov S.A., Sorokina S.V., Timoshina N.K. «InGaP/GaAs-GaSb and InGaP/GaAs/Ge-InGaAsSb Hybrid Monolithic/Stacked Tandem Concentrator Solar Cells» // Proc. of the 21st EPSEC (Dresden, Germany, 4-8 September, 2006) pp.133-136.